Part Number Hot Search : 
LTC1878 11060 ALFY455E AX500 DTC124 ADUM3300 BT137 DG3535DB
Product Description
Full Text Search
 

To Download HT2302 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  features ? super high dense cell design for low r ds(on) ? rugged and reliable. ? simple drive requirement. ? sot-23 package. product summary v dss i d r ds(on) (m ? )typ 20v 2.5a 40@ vgs=4.5v 50@ vgs=2.5v absolutemaximum ratings t a =25 unless otherwise noted parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v drain current-continuous a @tj=125 -pulse d b i d 2.5 a i dm 8 a drain-source diode forward current a i s 1.25 a maximum power dissipation a ta=25 p d 1.25 w ta=75 0.8 operating junction and storage temperature range t j , t stg -55 to 150 thermal characteristics thermal resistance, junction-to-ambient a r th j a 100 0 c/w HT2302 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical c haracteristics (ta = 25 unless otherwise noted) parameter symbol condition min. typ. max. unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250 a 20 v zero gate voltage drain current i dss v ds =16v, v gs =0v 1 a gate-body leakage i gss v gs =8v, v ds =0v 100 na on characteritics gate threshold voltage v gs(th) v ds =v gs , i d =-250 a 0.6 0.8 1.5 v drain-source on-state resistance r ds(on) v gs =4.5v, i d =-2.5a 40 60 m ? v gs =2.5v, i d =2.0a 50 115 forward transconductance g fs v ds =5v, i d =4.5a 5 s daynamic characteristics input capacitance c iss v ds =10v v gs =0v f=1.0mhz 456 p f output capacitance c oss 86 p f reverse transfer capacitance c rss 59 p f switching characterisistics turn-on delay time t d(on) v dd =10v i d =1a, v gen =4.5v r l =10ohm r gen =10ohm 11.2 ns rise time tf 3.5 ns turn-off delay time t d(off) 20 ns fall time t f 4.5 ns total gate charge q g v ds =10v,i d =1a, v gs =4.5v 5 nc gate-source charge q gs 0.9 nc gate-drain charge q d 1.2 nc drain-source diode characteristics diode forward voltage v sd v gs =0v,i s =1.25a 0.84 1.2 v notes a. surface mounted on fr4 board, t Q 10sec b. pulse test: pulsewidth Q 300us, duty cycle Q 2% c. guaranteed by design, not s ubject to production testing. HT2302 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification


▲Up To Search▲   

 
Price & Availability of HT2302

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X